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PD - 96145A
IRF7751GPBF
l l l l l l l
Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free
HEXFET(R) Power MOSFET VDSS
-30V
RDS(on) max
35m@VGS = -10V 55m@VGS = -4.5V
ID
-4.5A -3.8A
Description
HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de' ! " # A2A9 !A2AT "A2AT #A2AB & % $ 'A2A9! &A2AT! %A2AT! $A2AB!
signer with an extremely efficient and reliable device for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-30 -4.5 -3.6 -18 1.0 0.64 0.008 20 -55 to +150
Units
V A W W/C V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
125
Units
C/W
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05/14/09
IRF7751GPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. Typ. Max. Units Conditions -30 --- --- V VGS = 0V, ID = -250A --- 0.020 --- V/C Reference to 25C, ID = -1mA --- --- 35 VGS = -10V, ID = -4.5A m --- 55 VGS = -4.5V, ID = -3.8A -1.0 --- -2.5 V VDS = VGS, ID = -250A 6.8 --- --- S VDS = -10V, ID = -4.5A --- --- -15 VDS = -24V, VGS = 0V A --- --- -25 VDS = -24V, VGS = 0V, TJ = 70C --- --- -100 VGS = -20V nA --- --- 100 VGS = 20V --- 29 44 ID = -4.5A --- 5.5 --- nC VDS = -15V --- 5.0 --- VGS = -10V --- 13 20 VDD = -15V --- 16 24 ID = -1.0A ns --- 155 233 RG = 6.0 --- 80 120 VGS = -10V --- 1464 --- VGS = 0V --- 227 --- pF VDS = -25V --- 146 --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- 23 19 -1.0 A -18 -1.2 35 28 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.0A, VGS = 0V TJ = 25C, IF = -1.0A di/dt = 100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t < 10 sec.
Pulse width 400s; duty cycle 2%.
2
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IRF7751GPBF
100
VGS TOP -10.0V -7.0V -5.5V -4.5V -4.0V -3.5V -3.0V BOTTOM -2.7V
100
-ID, Drain-to-Source Current (A)
10
-ID, Drain-to-Source Current (A)
10
VGS -10.0V -7.0V -5.5V -4.5V -4.0V -3.5V -3.0V BOTTOM -2.7V TOP
1
-2.7V
0.1
-2.7V
1
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100
20s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
100
2.0
ID = -4.5A
-I D , Drain-to-Source Current (A)
1.5
10
TJ = 150 C
TJ = 25 C
1
1.0
0.5
0.1 2.0
V DS= -15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7751GPBF
4000
-VGS , Gate-to-Source Voltage (V)
3200
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
14 12 10 8 6 4 2 0
ID = -4.5A V DS=-24V V DS=-15V
C, Capacitance (pF)
Ciss
2400
1600
800
Coss Crss
0
1
10
100
-VDS , Drain-to-Source Voltage (V)
0
10
20
30
40
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
TJ = 150 C
-ID , Drain Current (A) I
10us 10 100us
10
TJ = 25 C
1
1ms 1 10ms
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
-VSD ,Source-to-Drain Voltage (V)
0.1 0.1
TC = 25 C TJ = 150 C Single Pulse
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7751GPBF
5.0
VDS
4.0
RD
VGS RG
-ID , Drain Current (A)
D.U.T.
+
3.0
V GS
2.0
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
1.0
td(on) tr t d(off) tf
VGS
0.0
25
50
TC , Case Temperature ( C)
75
100
125
150
10%
Fig 9. Maximum Drain Current Vs. Case Temperature
90% VDS
Fig 10b. Switching Time Waveforms
1000
Thermal Response (Z thJA )
100
D = 0.50 0.20
10
0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100
1
0.1 0.00001
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
V DD
5
IRF7751GPBF
RDS ( on ) , Drain-to-Source On Resistance ) (
( , RDS(on) Drain-to -Source On Resistance)
0.100
0.200
0.080
0.150
0.060
0.100 VGS = -4.5V 0.050 VGS = -10V
ID = -4.5A
0.040
0.020 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
0.000 0 10 20 30 40 -ID , Drain Current ( A )
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
QGS
QGD
VGS
-3mA
VG
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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+
10 V
D.U.T.
-
VDS
IRF7751GPBF
TSSOP8 Package Outline
Dimensions are shown in milimeters (inches)
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF7751GPBF
TSSOP8 Part Marking Information
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TSSOP-8 Tape and Reel Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 05/2009
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